New Original Mos SI7942DP-T1-GE3 SI7942 MARKING 7942 Dual N-Channel 100-V (D-S) MOSFET

New Original SI7942DP-T1-GE3 RF Transistor Dual N-Channel MOSFET 2N-CH 100V 3.8A PPAK SO8

The SI7942DP-T1-GE3 is a radio frequency transistor, specifically a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) type. The following is a detailed introduction to the product:

1. Basic product information
Manufacturer model: SI7942DP-T1-GE3
Product category: MOSFET small signal, RF transistor

2. Main technical parameters
Transistor polarity: N-Channel
Number of channels: 2 Channel
Drain-source breakdown voltage (Vdss): 100V
Drain current (Id): Continuous drain current is 3.8A (some data may show 5.9A, depending on test conditions and manufacturer’s specifications)
Drain-source resistance (RDS(on)): 49 mOhms (measured under specific conditions)
Gate voltage: -20 V, +20 V (positive and negative voltage range that the gate can withstand)
Gate-source threshold voltage (Vgs(th)): 2 V (or 4V@250uA, may vary under different conditions)
Gate charge (Qg): 24 nC (measured under specific conditions)
Power dissipation (Pd): 3.5 W (or 1400mW, depending on the package and heat dissipation conditions)
Operating temperature: -55°C to +150°C

III. Physical characteristics
Mounting style: SMD/SMT (surface mount/surface mount technology)
Appearance parameters:
Height: 1.04 mm
Length: 6.15 mm
Width: 5.15 mm
Unit weight: 506.600 mg

IV. Application and characteristics
Application: SI7942DP-T1-GE3 is suitable for circuit applications that require high-frequency switching, low power consumption and high current handling, such as RF circuits, amplifier circuits, switching circuits, etc.

Мүмкіндіктер:
With low on-resistance and high switching speed, it helps to reduce power loss and improve circuit efficiency.
Using surface mount technology, it is easy to automate production and assembly.