JCS12N65FT N-Channel Enhancement Mode Field Effect Transistor TO-220MF

JCS12N65FT N-Channel MOSFET – The Optimal Choice for Efficient Power Switch Management

Manufactured using advanced trench technology, this MOSFET is specifically designed for high-efficiency switch mode power supplies, electronic lamp ballasts based on a half-bridge, LED power supplies, and more.

Advanced Trench Technology for High-Efficiency Power Applications
The JCS12N65FT N-Channel MOSFET is engineered to deliver exceptional performance with its low gate charge, low Crss (typ. 23pF), and fast switching speeds. These features are crucial for minimizing power losses and optimizing power transfer efficiency in various applications. The MOSFET is avalanche tested, ensuring reliable operation even under demanding conditions.

Reliable and Efficient MOSFET for Various Power Switching Applications
With a high ID of 12A at 25℃ and 7.6A at 100℃, the JCS12N65FT can handle substantial electric currents, making it suitable for power-hungry applications. The BVdss of 650V ensures robust voltage handling capabilities, while the low Rds(on) of 0.78Ω minimizes conduction losses, resulting in efficient power management.

The MOSFET’s gate charge (Qg-typ) of 39nC enables safe and reliable current transfer, facilitating smooth switching transitions. Its improved dv/dt capability ensures reliable performance and protection against voltage spikes or transients.

Complying with RoHS regulations, the JCS12N65FT N-Channel MOSFET is environmentally friendly and free from hazardous substances, making it a responsible choice for your power management needs.