Описание

Original MOS PKCH2BB PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor

Product Detail:
Absolute maximum ratings (TA = 25 °C )
V(BR)DSS: 30V
VGS: ±20V
RDS(ON): 0.99mΩ
Operating junction & storage temperature Range: -55 to 150°C
Continuous drain current:
TC = 25°C: 228A
TC = 100°C: 145A
Continuous drain current:
TA = 25°C: 50A
TA = 70°C: 50A
Pulsed drain current: 350A
Type designator: PKCH2BB
Type of transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 5 W
Maximum drain-source voltage (Vds): 30 V
Maximum gate-source voltage (Vgs): 20 V
Maximum gate-threshold voltage (Vgs(th)): 2.35 V
Maximum drain current (Id): 50 A
Maximum junction temperature (Tj): 150 °C
Total gate charge (Qg): 128 nC
Rise time (tr): 49 nS
Drain-source capacitance (Cd): 1052 pF
Maximum drain-source on-state resistance (Rds): 0.00099 Ohm

Функции
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.

Приложения
• Protection Circuits Applications.
• Computer for DC to DC Converters Applications.