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STP6N95K5 6N95K5 N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole TO-220
STP6N95K5 are N-channel Power MOSFETs developed using MD K5 technology and mainly used in APW12 power supply maintenance. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical aural structure. -resistance and ultra-low gate charges for applications that require superior power density and high efficiency.
STP6N95K5 Product features:
1. DPAK 950 V worldwide best RDs(on)
2. Worldwide best FOM
3. Ultra low gate charge
4. 100% avalanche tested
5. Zener-protected
Applications:
Switching applications
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Product Attribute |
Attribute Value |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 950 V |
| Id – Continuous Drain Current: | 9 A |
| Rds On – Drain-Source Resistance: | 1.25 Ohms |
| Vgs – Gate-Source Voltage: | – 30V, + 30V |
| Vgs th – Gate-Source Threshold Voltage: | 3 V |
| Qg – Gate Charge: | 13 nC |
| Minimum Operating Temperature: | – 55°C |
| Maximum Operating Temperature: | + 150 °C |
| Pd – Power Dissipation: | 90 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | STMicroelectronics |
| Configuration: | Single |
| Fall Time: | 21 ns |
| Product Type: | MOSFET |
| Rise Time: | 12 ns |
| Series: | STP6N95K5 |
| Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 12 ns |
