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MDU3603 MDU3603RH Single P-Channel Trench MOSFET 30V 67A 9.1mΩ
MDU3603 General Description
This Mosfet uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
1. VDS = -30V
2. ID = -67A @VGS = -10V
3. RDS(ON)
1. < 7.5mΩ @VGS = -20V
2. < 9.1mΩ @VGS = -10V
3. < 13.6mΩ @VGS = -5V
Applications
1. Load Switch
2. General purpose applications
3. Smart Module for Note PC Battery
| 1. | Configuration | Single |
| 2. | Process Technology | TMOS |
| 3. | Channel Mode | Enhancement |
| 4. | Channel Type | P |
| 5. | Number of Elements per Chip | 1 |
| 6. | Maximum Drain Source Voltage (V) | 30 |
| 7. | Maximum Gate Source Voltage (V) | +-25 |
| 8. | Maximum Gate Threshold Voltage (V) | 3 |
| 9. | Maximum Continuous Drain Current (A) | 67 |
| 10. | Maximum Gate Source Leakage Current (nA) | 100 |
| 11. | Maximum IDSS (uA) | 1 |
| 12. | Maximum Drain Source Resistance (mOhm) | 7.5@20V |
| 13. | Typical Gate Charge @ Vgs (nC) | 38.4@10V |
| 14. | Typical Gate Charge @ 10V (nC) | 38.4 |
| 15. | Typical Input Capacitance @ Vds (pF) | 1788@15V |
| 16. | Maximum Power Dissipation (mW) | 2500 |
| 17. | Typical Fall Time (ns) | 53.2 |
| 18. | Typical Rise Time (ns) | 13 |
| 19. | Typical Turn-Off Delay Time (ns) | 61.6 |
| 20. | Typical Turn-On Delay Time (ns) | 15.3 |
| 21. | Minimum Operating Temperature (°C) | -55 |
| 22. | Maximum Operating Temperature (°C) | 150 |
| 23. | Packaging | Tape and Reel |
| 24. | Mounting | Surface Mount |
| 25. | Package Height | 1.1(Max) |
| 26. | Package Width | 6.1(Max) |
| 27. | Package Length | 5.1(Max) |
| 28. | PCB changed | 8 |
| 29. | Pin Count | 8 |
