描述
STP6N95K5 6N95K5 N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole TO-220
STP6N95K5 are N-channel Power MOSFETs developed using MD K5 technology and mainly used in APW12 power supply maintenance. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical aural structure. -resistance and ultra-low gate charges for applications that require superior power density and high efficiency.
STP6N95K5 Product features:
1. DPAK 950 V worldwide best RDs(on)
2. Worldwide best FOM
3. Ultra low gate charge
4. 100% avalanche tested
5. Zener-protected
Applications:
Switching applications
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Product Attribute | Attribute Value |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 950 V |
Id – Continuous Drain Current: | 9 A |
Rds On – Drain-Source Resistance: | 1.25 Ohms |
Vgs – Gate-Source Voltage: | – 30V, + 30V |
Vgs th – Gate-Source Threshold Voltage: | 3 V |
Qg – Gate Charge: | 13 nC |
Minimum Operating Temperature: | – 55°C |
Maximum Operating Temperature: | + 150 °C |
Pd – Power Dissipation: | 90 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 21 ns |
Product Type: | MOSFET |
Rise Time: | 12 ns |
Series: | STP6N95K5 |
Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 33 ns |
Typical Turn-On Delay Time: | 12 ns |